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2SC4634LS 数据表(PDF) 2 Page - Sanyo Semicon Device |
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2SC4634LS 数据表(HTML) 2 Page - Sanyo Semicon Device |
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2 / 3 page ![]() 2SC4634LS No.3703-2/3 ITR07350 0.2 0.3 0.5 0.4 0.1 0 024 8 10 6 IC -- VCE ITR07349 IB=0 IC -- VBE(on) IC -- VCE ITR07352 0 2 4 6 8 10 12 0 0.2 0.4 0.6 0.8 10 14 12 hFE -- IC ITR07351 2 µA 4 µA 6 µA 8 µA 10 µA 12 µA 14 µA ITR07353 Cob -- VCB 1.0 10 7 7 5 5 3 2 2 10 1.0 7 7 5 5 3 2 ITR07354 f T -- IC 1.0 0.1 57 7 23 5 2 0.1 1.0 57 7 23 5 10 7 23 5 100 7 23 5 f=1MHz 5 5 3 3 2 7 7 10 100 0.1 1.0 57 2 3 5 7 10 22 35 7 VCE=5V VCE=10V VCE=5V 12 0 8 4 16 20 02 4 8 610 --40°C Ta=120 °C 25°C 18 µA IB=0 0.2mA 0.4mA 0.6mA 0.8mA 1.0mA 1.2mA 1.4mA 1.6mA 1.8mA 2.0mA Collector-to-Emitter Voltage, VCE -- V Collector-to-Emitter Voltage, VCE -- V Collector Current, IC -- mA Collector-to-Base Voltage, VCB -- V Collector Current, IC -- mA Base-to-Emitter ON Voltage, VBE(on) -- V Continued from preceding page. Ratings Parameter Symbol Conditions min typ max Unit Collector-to-Emitter Saturation Voltage VCE(sat) IC=500µA, IB=100µA5 V Base-to-Emitter Saturation Voltage VBE(sat) IC=500µA, IB=100µA2 V Collector-to-Base Breakdown Voltage V(BR)CBO IC=10µA, IE=0 1500 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=100µA, RBE=∞ 1500 V Emitter-to-Base Breakdown Voltage V(BR)EBO IE=10µA, IC=0 5 V Output Capacitance Cob VCB=100V, f=1MHz 1.5 pF Thermal Resistance Rthj-c Junction – case 12.5 °C / W |
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