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2SC4635LS 数据表(PDF) 2 Page - Sanyo Semicon Device |
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2SC4635LS 数据表(HTML) 2 Page - Sanyo Semicon Device |
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2 / 3 page ![]() 2SC4635LS No.3704-2/3 ITR07360 0.8 1.2 2.0 1.6 0.4 0 024 8 10 6 IC -- VCE ITR07359 IB=0 IC -- VBE(on) IC -- VCE ITR07362 0 4 8 12 16 20 24 0 0.2 0.4 0.6 0.8 10 14 12 hFE -- IC ITR07361 5 µA 10 µA 15 µA 20 µA 25 µA 30 µA 35 µA 40 µA 45 µA 50µ A ITR07363 Cob -- VCB 1.0 10 7 5 3 2 2 10 1.0 7 7 5 5 3 2 ITR07364 f T -- IC 1.0 10 0.1 57 7 7 23 3 55 2 0.1 1.0 57 7 23 5 10 7 23 5 100 7 23 5 f=1MHz 5 5 3 3 2 2 7 7 10 100 0.1 1.0 57 2 3 5 7 10 22 33 57 VCE=5V VCE=10V VCE=5V 30 0 20 10 40 50 02 4 8 610 --40°C Ta=120 °C 25°C IB=0 1mA 2mA 3mA 4mA 5mA 6mA 7mA 8mA 10mA 9mA Collector-to-Emitter Voltage, VCE -- V Collector-to-Emitter Voltage, VCE -- V Collector Current, IC -- mA Collector-to-Base Voltage, VCB -- V Collector Current, IC -- mA Base-to-Emitter ON Voltage, VBE(on) -- V Continued from preceding page. Ratings Parameter Symbol Conditions min typ max Unit Collector-to-Emitter Saturation Voltage VCE(sat) IC=1.5mA, IB=0.3mA 5 V Base-to-Emitter Saturation Voltage VBE(sat) IC=1.5mA, IB=0.3mA 2 V Collector-to-Base Breakdown Voltage V(BR)CBO IC=100µA, IE=0 1500 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=1mA, RBE=∞ 1500 V Emitter-to-Base Breakdown Voltage V(BR)EBO IE=100µA, IC=0 5 V Output Capacitance Cob VCB=100V, f=1MHz 1.9 pF Thermal Resistance Rthj-c Junction – case 8.3 °C / W |
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