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2SC4636LS 数据表(PDF) 2 Page - Sanyo Semicon Device |
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2SC4636LS 数据表(HTML) 2 Page - Sanyo Semicon Device |
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2 / 3 page ![]() 2SC4636LS No.3705-2/3 hFE -- IC 1.0 0.1 23 5 7 35 7 10 23 5 7 2 1.0 10 2 3 5 7 100 2 3 5 7 5 1.0 2 3 5 7 10 2 7 VCE=5V 0.1 23 5 7 1.0 23 5 7 2 f T -- IC 1.0 10 3 5 7 2 2 10 23 5 100 7 1.0 23 5 7 0.1 23 5 7 57 Cob -- VCB f=1MHz 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 IC -- VBE(on) 0 2 4 6 8 10 12 VCE=5 0 40 80 120 160 200 02468 10 IC -- VCE IB=0 1 µA 2 µA 3 µA 4 µA 5 µA 6 µA 7 µA 10 µA 9 µA 0 1 2 3 4 5 02468 10 IC -- VCE IB=0 20 µA 50µA Ta=120 °C 25°C --40°C ITR07369 ITR07370 ITR07372 ITR07371 ITR07374 ITR07373 VCE=10V 500 µA 100µA 150µ A 200µ A 250µ A 300µ A 450 µA 400 µA 350 µA 8 µA Collector-to-Emitter Voltage, VCE -- V Collector-to-Emitter Voltage, VCE -- V Collector Current, IC -- mA Collector-to-Base Voltage, VCB -- V Collector Current, IC -- mA Base-to-Emitter ON Voltage, VBE(on) -- V Continued from preceding page. Ratings Parameter Symbol Conditions min typ max Unit Collector-to-Emitter Saturation Voltage VCE(sat) IC=200µA, IB=40µA5 V Base-to-Emitter Saturation Voltage VBE(sat) IC=200µA, IB=40µA2 V Collector-to-Base Breakdown Voltage V(BR)CBO IC=10µA, IE=0 2000 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=100µA, RBE=∞ 1800 V Emitter-to-Base Breakdown Voltage V(BR)EBO IE=10µA, IC=0 5 V Output Capacitance Cob VCB=100V, f=1MHz 1.4 pF Thermal Resistance Rthj-c Junction – case 12.5 °C / W |
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