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2SC4637LS 数据表(PDF) 2 Page - Sanyo Semicon Device |
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2SC4637LS 数据表(HTML) 2 Page - Sanyo Semicon Device |
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2 / 3 page ![]() 2SC4637LS No.3706-2/3 hFE -- IC 1.0 0.1 23 5 7 35 7 10 23 5 7 2 2 10 2 3 5 7 100 3 5 7 VCE=5V f T -- IC 1.0 10 3 5 7 2 2 10 23 5 100 7 1.0 23 5 7 0.1 23 5 7 57 Cob -- VCB f=1MHz 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 IC -- VBE(on) 0 2 4 6 8 10 12 14 16 0 100 200 300 400 500 02468 10 IC -- VCE IB=0 2 µA 4 µA 6 µA 0 2 4 6 8 10 02468 10 IC -- VCE IB=0 50 µA Ta=120°C 25°C --40°C ITR07379 ITR07380 ITR07382 ITR07381 ITR07384 ITR07383 0.1 23 5 7 1.0 23 5 7 23 5 VCE=10V 5 1.0 2 3 5 7 7 2 3 5 500µ A 1mA 100µA 200µA 300µA 400µ A 8 µA 10 µA 12 µA 14 µA 18 µA 16 µA 900 µA 800 µA 700 µA 600 µA Collector-to-Emitter Voltage, VCE -- V Collector-to-Emitter Voltage, VCE -- V Collector Current, IC -- mA Collector-to-Base Voltage, VCB -- V Collector Current, IC -- mA Base-to-Emitter ON Voltage, VBE(on) -- V Continued from preceding page. Ratings Parameter Symbol Conditions min typ max Unit Collector-to-Emitter Saturation Voltage VCE(sat) IC=600µA, IB=120µA5 V Base-to-Emitter Saturation Voltage VBE(sat) IC=600µA, IB=120µA2 V Collector-to-Base Breakdown Voltage V(BR)CBO IC=100µA, IE=0 2000 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=100µA, RBE=∞ 1800 V Emitter-to-Base Breakdown Voltage V(BR)EBO IE=10µA, IC=0 5 V Output Capacitance Cob VCB=100V, f=1MHz 1.8 pF Thermal Resistance Rthj-c Junction – case 8.3 °C / W |
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