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BCR3AM-8 数据表(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BCR3AM-8 数据表(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 1 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark isc Thyristors BCR3AM-8 DESCRIPTION · A triac is a solid state silicon · AC switch which may be gate triggered from an off-state to an on-state for either polarity of applied voltage · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · AC Switch&Lighting · Motor Controls · Solid State Relay ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MIN UNIT VDRM Repetitive peak off-state voltage 400 V VRRM Repetitive peak reverse voltage 500 V IT(RMS) RMS on-state current @Tc=86℃ 3 A ITSM Surge non-repetitive on-state current (60HZ) 30 A Tj Operating junction temperature -40~125 ℃ Tstg Storage temperature -40~125 ℃ ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN MAX UNIT IRRM Repetitive peak reverse current VR=VRRM Rated; VD=VDRM Rated; Tj=125℃ 2 mA IDRM Repetitive peak off-state current VTM On-state voltage ITM=4.5A 1.5 V IGT Gate-trigger current VD =6V;RL=6Ω;RG=330Ω Ⅰ 30 mA Ⅱ 30 Ⅲ 30 VGT Gate-trigger voltage VD =6V;RL=6Ω;RG=330Ω Ⅰ 1.5 V Ⅱ 1.5 Ⅲ 1.5 |
类似零件编号 - BCR3AM-8 |
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类似说明 - BCR3AM-8 |
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