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IRFP360LC 数据表(PDF) 1 Page - Inchange Semiconductor Company Limited |
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IRFP360LC 数据表(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.cn isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor IRFP360LC · FEATURES · With TO-247 packaging · Uninterruptible power supply · High speed switching · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operationz · APPLICATIONS · Switching applications · ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 400 V VGSS Gate-Source Voltage ± 30 V ID Drain Current-Continuous@TC=25℃ TC=100℃ 23 14 A IDM Drain Current-Single Pulsed 92 A PD Total Dissipation 280 W Tj Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ · THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-case thermal resistance 0.45 ℃ /W Rth(ch-a) Channel-to-ambient thermal resistance 40 ℃ /W |
类似零件编号 - IRFP360LC |
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类似说明 - IRFP360LC |
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