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ISCZ18150 数据表(PDF) 1 Page - Inchange Semiconductor Company Limited |
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ISCZ18150 数据表(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() isc website:www.iscsemi.cn isc & iscsemi is registered trademark 1 ISCZ18150 Three Phases Rectifying Bridge Module FEATURES · The chips are electrically insulated from bosom plate ,2500V AC voltage · Package as per international standard · Low forward voltage drop · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · AC, DC Motor Drive/AVR/Switching for three phase rectification ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER CONDITIONS VALUE UNIT VRRM Repetitive Peak Reverse Voltage Three Phase full wave ,Tp=10ms 300 V ID Output Current (D.C) TC=100℃ 10 A IFSM Surge Forward Current Half-sine wave, VR=0.6VRRM 750 A Viso Maximum Power Dissipation 50Hz,R.M.S,t=1ms,Iiso=1mA(max) 2500 V TJ Junction Temperature -40~125 ℃ Tstg Storage Temperature Range -40~125 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.2 ℃ /W |
类似零件编号 - ISCZ18150 |
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类似说明 - ISCZ18150 |
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