TIP31_18 datasheet(1/2 Pages) ISC

部件名	TIP31

功能描述	isc Silicon NPN Power Transistors

PDF	2 Pages

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制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Website：www.iscsemi.com

isc & iscsemi is registered trademark

1

isc Silicon NPN Power Transistors

TIP31

DESCRIPTION

·

Collector-Emitter Saturation Voltage-

: VCE(sat) = 1.2V(Max.)@IC= 3A

·

Collector-Emitter Breakdown Voltage-

: V(BR) CEO= 40V(Min)

·

Complement to Type TIP32

·

Minimum Lot-to-Lot variations for robust device

performance and reliable operation

APPLICATIONS

·

Designed for use in general purpose amplifier and switching

applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

40

V

VCEO

Collector-Emitter Voltage

40

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

3

A

ICM

Collector Current-Pulse

5

A

IB

Base Current

1

A

PC

Collector Power Dissipation

TC=25℃

25

W

Tj

Junction Temperature

150

℃

Tstg

Storage Ttemperature Range

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

5

℃

/W

Rth j-a

Thermal Resistance,Junction to Ambient

62.5

℃

/W

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