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LTE-R38381-STR-U 数据表(PDF) 2 Page - Lite-On Technology Corporation |
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LTE-R38381-STR-U 数据表(HTML) 2 Page - Lite-On Technology Corporation |
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2 / 6 page ![]() 2/6 Part No. : LTE-R38381-STR-U BNS-OD-FC 002/A4 IR Emitter and Detector LTE-R38381-STR-U 3. Absolute Maximum Ratings at TA=25°C Parameter Maximum Rating Unit Power Dissipation 1.8 W Peak Forward Current(300pps, 10µs pulse) 5 A DC Forward Current 1 A Reverse Voltage 5 V Thermal Resistance Junction 10 K/W Operating Temperature Range -40°C to + 85°C Storage Temperature Range -55°C to + 100°C Infrared Soldering Condition 260°C for 10 Seconds Max. 4. Electrical / Optical Characteristics at TA=25°C Parameter Symbol Min. Typ. Max. Unit Test Condition Radiant Intensity IE - 120 - mW/sr IF = 1A Total Radiant Flux Фe - 200 - mW IF = 1A Peak Emission Wavelength λPeak - 940 - nm IF = 1A Spectral Line Half-Width ∆λ - 50 - nm IF = 1A Forward Voltage VF - 1.6 2.1 V IF = 1A Reverse Current IR - - 10 µA VR = 5V Rise/Fall Time Tr/Tf - 30 - ns 10%~90% Viewing Angle 2θ1/2 - 90 - deg NOTE: 1. θ1/2 is the off-axis angle at which the luminous intensity is half the axial luminous intensity. 2. The dominant wavelength, λd is derived from the CIE chromaticity diagram and represents the single wavelength which defines the color of the device. |
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