2

Freescale Semiconductor

Wireless RF Product Device Data

MRF9200LR3 MRF9200LSR3

Table 3. ESD Protection Characteristics

Test Conditions

Class

1C (Minimum)

B (Minimum)

IV (Minimum)

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics

Zero Gate Voltage Drain Leakage Current

—

—

10

µAdc

Zero Gate Voltage Drain Leakage Current

—

—

1

µAdc

Gate−Source Leakage Current

—

—

1

µAdc

On Characteristics

Gate Threshold Voltage

1.5

2.7

3.5

Vdc

Gate Quiescent Voltage

3

3.7

4.5

Vdc

Drain−Source On−Voltage

—

0.25

0.4

Vdc

Forward Transconductance

—

8.8

—

S

Reverse Transfer Capacitance

—

2.5

—

pF

f = 880 MHz, Single−Carrier N−CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±750 kHz

Offset. Peak/Avg. Ratio = 9.8 dB @ 0.01% Probability on CCDF.

Power Gain

16

17.5

—

dB

Drain Efficiency

22

25

—

%

Adjacent Channel Power Ratio

ACPR

—

−46.5

−45

dBc

Input Return Loss

IRL

—

−13

−9

dB

1. Part is internally matched both on input and output.