Advanced Information

HIGH TEMPERATURE N-CHANNEL POWER FET

HTNFET

• Down-Hole Oil, Gas and Geothermal Well

• Aerospace and Avionics

• Turbine Engine Control

• Industrial Process Control

• Nuclear Reactor

• Electric Power Conversion

• Heavy Duty Internal Combustion Engines

• Specified Over -55 to +225

°C

• Output Current up to 1 Amp Continuous

• Typical Input Voltage up to 60V

• Silicon-On-Insulator (SOI)

• 4-Pin Power-Tab Package,

8-Pin Ceramic Dip with Integral Heat Sink or

Die Dimensions 4.699 x 2.286 mm

FEATURES

APPLICATIONS

The HTNFET is a high reliability N-Channel Power FET

designed specifically for extremely wide temperature

range applications such as down-hole instrumentation,

aerospace, turbine engine and industrial process control.

This power FET is fabricated using a Silicon-On-Insulator

(SOI) process that dramatically reduces leakage currents

at high temperatures.

GENERAL DESCRIPTION

Solid State Electronics Center • 12001 State Highway 55, Plymouth, MN 55441 • (800) 323-8295 • http://www.ssec.honeywell.com

High DC current capability combined with low Rds-ON make

this component suitable both for DC and switching applica-

tions. Typically, parts will operate at +300

°C up to a year,

with derated performance. All parts are burned in to elimi-

nate infant mortality. Additionally, each part is tested over -

55 to +225

°C to provide guaranteed performance over the

entire temperature band.

FUNCTIONAL DIAGRAM

Drain

Gate

Source

PACKAGE DIAGRAMS

4-Pin Power-Tab Package

8-Pin Ceramic DIP With Heat Sink

1

2

3

4

8

6

5

7 Gate

Source

Source

Source

Drain

Drain

Drain

Gate

DIE DIAGRAM