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© Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Product data sheet

Rev. 05 — 24 November 2004

3 of 9

Philips Semiconductors

PIMZ2; PUMZ2

NPN/PNP general-purpose double transistors

5.

Limiting values

[1]

Device mounted on an FR4 printed-circuit board.

6.

Thermal characteristics

[1]

Device mounted on an FR4 printed-circuit board.

Table 6:

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

Per transistor; for the PNP transistor with negative polarity

collector-base voltage

open emitter

-

60

V

collector-emitter voltage

open base

-

50

V

emitter-base voltage

open collector

-

7

V

collector current (DC)

-

150

mA

peak collector current

-

200

mA

peak base current

-

100

mA

total power dissipation

SOT457

[1] -

200

mW

SOT363

[1] -

180

mW

storage temperature

−65

+150

°C

junction temperature

-

150

°C

ambient temperature

−65

+150

°C

Per device

total power dissipation

SOT457

[1] -

300

mW

SOT363

[1] -

300

mW

Table 7:

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor

thermal resistance from

junction to ambient

SOT457

[1] -

-

625

K/W

SOT363

[1] -

-

694

K/W

Per device

thermal resistance from

junction to ambient

SOT457

[1] -

-

417

K/W

SOT363

[1] -

-

417

K/W