TPV375 datasheet(1/2 Pages) ASI

部件名	TPV375

功能描述	NPN SILICON RF POWER TRANSISTOR

PDF	2 Pages

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制造商	ASI [Advanced Semiconductor]

网页	http://www.advancedsemiconductor.com

标志

1 / 2 page

A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. A

7525 ETHEL AVENUE

• NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

1/1

Specifications are subject to change without notice.

CHARACTERISTICS T

C = 25

OC

SYMBOL

TEST CONDITIONS

MINIMUM TYPICAL MAXIMUM

UNITS

BVCEO

IC = 50 mA

35

V

BVCER

IC = 50 mA

RBE = 10

Ω

60

V

BVCBO

IC = 50 mA

65

V

BVEBO

IE = 10 mA

4.0

V

hFE

VCE = 5.0 V

IC = 1.0 A

20

120

---

Cob

VCB = 30 V

f = 1.0 MHz

85

pF

8.0

9.0

---

GPE

ψ

VCE = 28 V

IC = 2.5 A

Pout = 20 W

f = 225 MHz

VSWR =

∞:1

NO DEGRADATION IN OUTPUT POWER

IMD

3

VCE = 28 V

IC = 2.5 A

Pref =14 W

f = 225 MHz

Vision = -8.0 dB

Snd. = -7.0 dB

SB = -16 dB

-55

dB

NPN SILICON RF POWER TRANSISTOR

TPV375

DESCRIPTION:

The

TPV375 is a Common Emitter

Device Designed for Class A

Television Band III Applications.

FEATURES INCLUDE:

• Gold Metalization

• Emitter Ballasting

MAXIMUM RATINGS

IC

8 A

VCB

65 V

PDISS

140 W @ TC = 25

OC

TJ

-65

OC to +200 OC

TSTG

-65

OC to +150 OC

θθ

JC

1.5

OC/W

PACKAGE STYLE .500 4L STUD

1 = COLLECTOR

2 & 4 = EMITTER

3 = BASE

ORDER CODE: ASI10760

类似零件编号 - TPV375

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