ULF0291

Preliminary

CMOS IC

UNISONICTECHNOLOGIESCO.,LTD

3 of 4

www.unisonic.com.tw

QW-R125-059.a



PARAMETER

SYMBOL

RATINGS

UNIT

VAC, D1, D2, D3, D4, D5, D6

500

V

VREF

-0.3 ~ 10

V

Power Dissipation

1.25

W

Junction Temperature

-40 ~ +125

°C

Storage Temperature

-55 ~ +125

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



THERMAL RESISTANCES CHARACTERISTICS

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

100

°C/W



PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Input Voltage

VAC

For 220V application

220

260

V

Static Current

0.1

0.2

mA

Driving Current

ID1

18

mA

Driving Current

ID2-ID6

36

mA

Leakage Current

For High Voltage MOS

0.1

uA

Over Voltage Protection

Voltage in D6

100

120

140

V

Response Time

0.1

uS

Temp Coeff. Of Current

-0.3

%/°C

Current at Switching Point

10

mA