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3CD9D 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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3CD9D 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon PNP Power Transistors 3CD9D ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCEO(BR) Collector-Emitter Breakdown Voltage IC=- 10mA ; IB= 0 -110 V VEBO(BR) Emitter-Base Breakdown Voltage IE=- 10mA ; IC= 0 -4 V VCE(sat) Collector-Emitter Saturation Voltage IC=- 7.5A; IB= -1.5A -2 V VBE(sat) Base-Emitter Saturation Voltage IC= -7.5A; IB= -1.5A -2 V ICEO Collector Cutoff Current VCE=- 110V; IB= 0 -3.0 mA ICBO Collector Cutoff Current VCB=- 110V; IE= 0 -1.0 mA IEBO Emitter Cutoff Current VEB= -4V; IC= 0 -1.0 mA hFE DC Current Gain IC= -7.5A; VCE=-10V 10 180 |
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