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EMIF10-COM01F2 数据表(PDF) 2 Page - STMicroelectronics |
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EMIF10-COM01F2 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 7 page ![]() EMIF10-COM01F2 2/7 Table 2: Absolute Ratings (Tamb = 25°C) Table 3: Electrical Characteristics (Tamb = 25°C) Symbol Parameter and test conditions Value Unit VPP ESD discharge IEC61000-4-2, air discharge ESD discharge IEC61000-4-2, contact discharge 15 8 kV Tj Junction temperature 125 °C Top Operating temperature range - 40 to + 85 °C Tstg Storage temperature range - 55 to + 150 °C Symbol Parameter VBR Breakdown voltage IRM Leakage current @ VRM VRM Stand-off voltage VCL Clamping voltage Rd Dynamic impedance IPP Peak pulse current RI/O Series resistance between Input & Output Cline Input capacitance per line Symbol Test conditions Min. Typ. Max. Unit VBR IR = 1 mA 6 8 10 V IRM VRM = 3V per line 500 nA Rd IPP = 10A, tp = 2.5µs 1 Ω RI/O 180 200 220 Ω Cline At 0V bias 45 50 pF tLH Vinput = 2.8V Rload = 100k Ω 25 ns V I V RM PP I RM I V BR R I V CL slope : 1 / R d |
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