US16855

Preliminary

CMOS IC

UNISONICTECHNOLOGIESCO.,LTD

4 of 8

www.unisonic.com.tw

QW-R502-558.b



PARAMETER

SYMBOL

RATINGS

UNIT

Input Voltage

–0.3 ~ +6

V

Flag Voltage

–0.3 ~ +6

V

Control Input Voltage

–0.3 ~ +6

V

Output Voltage

V

Flag Current

50

mA

+0.5

DC

–0.1

Output Current

Pulse Width ≤100μs Single Pulse

+3

A

Power Dissipation

300

mW

Operating Temperature

–40 ~ +85

°C

Storage Temperature

–55 ~ +150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. The thermal shutdown circuit (operating temperature is more than 150 °C typ.) builds in this product.



RECOMMENDED OPERATING RANGE

PARAMETER

SYMBOL

RATINGS

UNIT

Input Voltage

+4 ~ +5.5

V

Operating Temperature

0 ~ +70

°C



PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

DC CHARACTERISTICS

OUT = open

1

5

μA

Circuit Current

1

1.5

mA

Low-level Input Voltage

CTL Pin

1.0

V

High-level Input Voltage

CTL Pin

2.0

V

0.01

1

μA

Input Current of CTL pin

0.01

1

μA

Output MOSFET On Resistance

100

130

mΩ

Output Leak Current

10

μA

Over Current Detect Threshold

0.6

0.9

1.25

A

Flag Output Resistance

10

25

Ω

Flag Leak Current

0.01

1

μA

2.2

2.5

2.8

V

2.0

2.3

2.6

V

Operating Voltage of Under

Voltage Locked Out Circuit

Hysteresis

0.1

0.2

0.3

V

AC CHARACTERISTICS

Output Transition Rising Time

2.5

12

ms

Output Transition Falling Time

10

μs

Over Current Detect Delay Time

5

20

μs

CTL Input Low-Level Time

CTL : H→L→H

20

μs