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BAS40CDW 数据表(PDF) 1 Page - Diotec Semiconductor |
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BAS40CDW 数据表(HTML) 1 Page - Diotec Semiconductor |
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1 / 2 page ![]() BAS40DW, BAS40ADW, BAS40CDW, BAS40SDW BAS40DW, BAS40ADW, BAS40CDW, BAS40SDW SMD Small Signal Diode Arrays SMD Kleinsignal-Dioden-Arrays IFAV = 200 mA VF1 < 0.715 V Tjmax = 125°C VRRM = 40 V IFSM = 600 mA Version 2018-09-19 SOT-363 Dimensions - Maße [mm] Typical Applications Signal processing, High-speed switching, Polarity protection Commercial grade Suffix -Q: AEC-Q101 compliant 1) Suffix -AQ: in AEC-Q101 qualification 1) Typische Anwendungen Signalverarbeitung, Schnelles Schalten, Verpolschutz Standardausführung Suffix -Q: AEC-Q101 konform 1) Suffix -AQ: in AEC-Q101 Qualifikation 1) Features Very low trr, Cj and IR Compliant to RoHS, REACH, Conflict Minerals 1) Besonderheiten Sehr niedriges trr, Cj und IR Konform zu RoHS, REACH, Konfliktmineralien 1) Mechanical Data 1) Mechanische Daten 1) Taped and reeled 3000 / 7“ Gegurtet auf Rolle Weight approx. 0.01 g Gewicht ca. Case material UL 94V-0 Gehäusematerial Solder & assembly conditions 260°C/10s Löt- und Einbaubedingungen MSL = 1 3 Single Diodes BAS40DW 1 = A1, 2 = A2, 3 = A3 4 = C3, 5 = C2, 6 = C1 Type Code 4A 2 x 2 Common Anode BAS40ADW 1 = C1, 2 = C2, 3 = A3/A4 4 = C3, 5 = C4, 6 = A1/A2 Type Code 4D 2 x 2 Common Cathode BAS40CDW 1 = A1, 2 = A2, 3 = C3/C4 4 = A3, 5 = A4, 6 = C1/C2 Type Code 4C 4 in Bridge Config- uration BAS40SDW 1 = A1, 2 = C2, 3 = A4/C3 4 = A3, 5 = C4, 6 = A2/C1 Type Code 4B Maximum ratings 2) Grenzwerte 2) Total power dissipation (per package) − Gesamtverlustleistung (pro Gehäuse) Ptot 200 mW 3) Max. average forward current – Dauergrenzstrom DC IFAV 200 mA 3) Repetitive peak forward current – Periodischer Spitzenstrom IFRM 300 mA 3) Non repetitive peak forward surge current – Stoßstrom-Grenzwert tp ≤ 1 s IFSM 600 mA Repetitive peak reverse voltage – Periodische Spitzensperrspannung VRRM 40 V Reverse voltage – Sperrspannung DC VR 40 V Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Tj TS -55…+125°C -55…+125°C 1 Please note the detailed information on our website or at the beginning of the data book Bitte beachten Sie die detaillierten Hinweise auf unserer Internetseite bzw. am Anfang des Datenbuches 2 TA = 25°C and per diode, unless otherwise specified – TA = 25°C und pro Diode, wenn nicht anders angegeben 3 Mounted on P.C. board with 3 mm2 copper pad per terminal − Montage auf Leiterplatte mit 3 mm2 Lötpad je Anschluss © Diotec Semiconductor AG http://www.diotec.com/ 1 Pb RoHS 2.4 2 x 0.65 5 6 4 0.9±0.1 2 ±0.1 Type Code 3 2 1 5 6 4 2 1 3 5 2 1 3 6 4 5 2 1 3 6 4 5 2 1 3 6 4 |
类似零件编号 - BAS40CDW |
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类似说明 - BAS40CDW |
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