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BAS70CDW 数据表(PDF) 2 Page - Diotec Semiconductor |
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BAS70CDW 数据表(HTML) 2 Page - Diotec Semiconductor |
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2 / 2 page ![]() BAS70DW, BAS70ADW, BAS70CDW, BAS70SDW Characteristics 1) Kennwerte 1) Forward voltage Durchlass-Spannung 2) Tj = 25°C IF = 1 mA 15 mA VF < 410 mV < 1000 mV Leakage current Sperrstrom 2 ) Tj = 25°C VR = 50 V IR < 100 nA Junction capacitance Sperrschichtkapazität VR = 0 V, f = 1 MHz CT typ. 2 pF Reverse recovery time Sperrverzug IF = 10 mA über/through IR = 10 mA bis/to IR = 1 mA trr < 5 ns Thermal resistance junction to ambient (per package) Wärmewiderstand Sperrschicht – Umgebung (per Gehäuse) RthA < 500 K/W 3) Disclaimer: See data book page 2 or website Haftungssauschluss: Siehe Datenbuch Seite 2 oder Internet 1 Valid per diode, unless otherwise specified Gültig pro Diode, wenn nicht anders angegeben 2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% 3 Mounted on 3 mm2 copper pads per terminal Montage auf 3 mm2 Kupferbelag (Lötpads) je Anschluss 2 http://www.diotec.com/ © Diotec Semiconductor AG 120 100 80 60 40 20 0 [%] I FAV Rated forward current versus ambient temperature )3 Zul. Richtstrom in Abh. von der Umgebungstemp. )3 [°C] T A 150 100 50 0 [A] I F Forward characteristics (typical values) Durchlasskennlinien (typische Werte) |
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