UB24205

Preliminary

CMOS IC

UNISONICTECHNOLOGIESCO.,LTD

4 of 10

www.unisonic.com.tw

QW-R121-019.b

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PARAMETER

SYMBOL

RATINGS

UNIT

V

CSI input pin voltage

V

BATN input pin voltage

V

Operating Temperature

-40 ~ +85

°C

Storage Temperature

-40 ~ +125

°C

Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

CURRENT CONSEMPTION

Supply Current

3.0

6.0

μA

Power-Down Current

0.1

μA

OPERATING VOLTAGE

Operating Input Voltage

1.8

9.0

V

DETECTION VOLTAGE

Overcharge Detection Voltage

4.200

4.250

4.300

V

Overcharge Release Voltage

4.005

4.055

4.105

V

Overdischarge Detection Voltage

2.150

2.250

2.350

V

Overdischarge Release Voltage

2.750

2.850

2.950

V

Over Current Detection Voltage

0.120

0.150

0.180

V

Short Circuit Detection Voltage

1.0

1.35

1.75

V

Reset Resistance For Over Current

Protection

350

500

650

kΩ

Charger Detection Voltage

-1.2

-0.7

-0.2

V

DELAY TIME

Overcharge Detection Delay Time

0.7

1.3

1.9

S

Overdischarge Detection Delay Time

100

180

260

mS

Over Current Detection Delay Time

5

10

20

mS

Short Circuit Detection Delay Time

5

10

65

µS

MOSFET

20.0

V

Drain-Source Breakdown Voltage

20.6

V

1

μA

Drain-Source Leakage Current

250

μA

0.6

1.4

V

Gate Threshold Voltage

0.6

1.4

V

45

mΩ

35

mΩ

Equivalent Drain-Source

On-Resistance

33

mΩ