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ESDALC6V1P5 数据表(PDF) 2 Page - STMicroelectronics |
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ESDALC6V1P5 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 5 page ![]() ESDALC6V1P5 2/5 Symbol Parameter VRM Stand-off voltage VBR Breakdown voltage VCL Clamping voltage IRM Leakage current IPP Peak pulse current αT Voltage tempature coefficient VF Forward voltage drop C Capacitance per line Rd Dynamic resistance ELECTRICAL CHARACTERISTICS (Tamb = 25°C) V I VCLVBR VRM IF VF IRM IPP Slope: 1/Rd Symbol Parameter Test conditions Value Unit VPP ESD discharge - IEC61000-4-2 air discharge IEC61000-4-2 contact discharge ±15 ±8 kV PPP Peak pulse power (8/20 µs) (see note 1) Tj initial = Tamb 30 W Tj Junction temperature 125 °C Tstg Storage temperature range -55to+150 °C TL Maximum lead temperature for soldering during 10s at N/A 260 °C Top Operating temperature range -40to+125 °C Note 1: for a surge greater than the maximum values , the diode will fail in short-circuit. ABSOLUTE RATINGS (Tamb = 25°C) Types VBR @IR IRM @VRM Rd αTC min. max. max. typ. max. typ. @0V VV mA µA V Ω 10 -4/°C pF ESDALC6V1P5 6.1 7.2 1 0.1 3 1.5 4.5 12 Symbol Parameter Value Unit Rth(j-a) Junction to ambient on printed circuit on recommended pad layout 220 °C/W THERMAL RESISTANCES |
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