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L8401G-R16-R 数据表(PDF) 2 Page - Unisonic Technologies |
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L8401G-R16-R 数据表(HTML) 2 Page - Unisonic Technologies |
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2 / 5 page ![]() L8401 LINEAR INTEGRATED CIRCUIT UNISONIC TECHNOLOGIES CO., LTD 2 of 5 www.unisonic.com.tw QW-R123-018.C PI N CON FI GU RAT I ON FU N CT I ON AL DI AGRAM Fig.1 FU N CT I ON AL DESCRI PT I ON The UTC L8401 includes one negative supply required for gate biasing from the single supply voltage, and all the other bias requirements for external FETs. A low current negative supply voltage includes an internal OSC and two 47nF external cap. The negative rail generator is common to all devices. This negative supply voltage used to drive the FET’s gate to obtain the required drain current because of he FET is a depletion mode transistor. There are for stages in the IC to baising the four external FETS. The drain voltage of the external FET FET1~4 is 2.2 volts set by the UTC L8401. The drain current of external FET is determined by the external resist RCAL1 or RCAL2. External resistor RCAL1 sets the drain current of FET1 and FET 2, and resistor RCAL2 sets the drain current of FET3 and FET4. |
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