2

IXDD408PI/408SI//408YI/408CI

Unless otherwise noted, T

≤ V

All voltage measurements with respect to GND. IXDD408 configured as described in Test Conditions.

Electrical Characteristics

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

High input voltage

3.5

V

Low input voltage

0.8

V

Input voltage range

-5

V

Input current

0V

≤ V

-10

10

µA

High output voltage

V

Low output voltage

0.025

V

Output resistance

@ Output high

0.8

1.5

Ω

Output resistance

@ Output Low

0.8

1.5

Ω

Peak output current

8

A

Continuous output

current

Limited by package power

dissipation

2

A

Enable voltage range

- .3

Vcc + 0.3

V

High En Input Voltage

2/3 Vcc

V

Low En Input Voltage

1/3 Vcc

V

Rise time

12

14

18

ns

Fall time

13

15

19

ns

On-time propagation

delay

37

38

42

ns

Off-time propagation

delay

32

34

38

ns

Enable to output high

delay time

Vcc=18V

52

ns

Disable to output low

Disable delay time

Vcc=18V

30

ns

Power supply voltage

4.5

18

25

V

Power supply current

1

0

3

10

10

mA

µA

µA

Parameter

Value

Supply Voltage

25 V

All Other Pins

-0.3 V to VCC + 0.3 V

≤25 oC

8 Pin PDIP (PI)

975mW

8 Pin SOIC (SI)

1055mW

TO220 (CI), TO263 (YI)

17W

Derating Factors (to Ambient)

8 Pin PDIP (PI)

7.6mW/oC

8 Pin SOIC (SI)

8.2mW/oC

TO220 (CI), TO263 (YI)

0.14W/oC

Storage Temperature

-65 oC to 150 oC

Lead Temperature (10 sec)

300 oC

Operating Ratings

Parameter

Value

Maximum Junction Temperature

150 oC

Operating Temperature Range

-40 oC to 85 oC

Thermal Impedance (Junction To Case)

TO220 (CI), TO263 (YI) (

θ

0.95 oC/W

Specifications Subject To Change Without Notice