Continental Device India Limited

An IS/ISO 9002 and IECQ Certified Manufacturer

NPN EPITAXIAL PLANAR SILICON TRANSISTOR

CSD655

(9AW)

TO-92

BCE

Marking : As Below

ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified)

DESCRIPTION

SYMBOL

VALUE

UNIT

Collector -Base Voltage

VCBO

30

V

Collector -Emitter Voltage

VCEO

15

V

Emitter Base Voltage

VEBO

5.0

V

Collector Current

IC

700

mA

Peak

ICP

1.0

A

Collector Power Dissipation

PC

500

mW

Operating And Storage Junction

Tj, Tstg

-55 to +150

deg C

Temperature Range

ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)

DESCRIPTION

SYMBOL

TEST CONDITION

MIN

TYP

MAX

UNIT

Collector -Base Voltage

VCBO

IC=10uA, IE=0

30

-

-

V

Collector -Emitter Voltage

VCEO

IC=10mA, IB=0

15

-

-

V

Emitter Base Voltage

VEBO

IE=10uA, IC=0

5.0

-

-

V

Collector Cut off Current

ICBO

VCB=20V, IE=0

-

-

1.0

uA

Base Emitter Voltage

VBE(on)

IC=150mA,VCE=1V

-

-

1.0

V

Collector Emitter Saturation Voltage

VCE(Sat)

IC=500mA,IB=50mA

-

-

0.50

V

DC Current Gain

hFE

IC=150mA,VCE=1V

250

-

1200

Dynamic Characteristics

Transition Frequency

ft

VCE=1V,IC=150mA,

-

250

-

MHz

Collector Out-put Capacitance

Cob

VCB=10V, IE=0

-

-

30

pF

f=1MHz

In-put Capacitance

Cib

VEB=0.5V, IC=0

-

-

120

pF

f=1MHz

hFE CLASSIFICATION

D : 250-500;

E : 300-800;

F : 600-1200

MARKING

CD

655

E

IS/ISO 9002

Lic# QSC/L- 000019.2

IS / IECQC 700000

IS / IECQC 750100

Continental Device India Limited

Data Sheet

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