15 A Low-Side RF MOSFET Driver

IXRFD615

2

Absolute Maximum Ratings

Electrical Characteristics

All voltage measurements with respect to GND. IXRFD615 configured as described in Test Conditions.

Symbol

Parameter

Test Conditions

Typ

Max

Units

Min

High input voltage

V

3.5

Low input voltage

0.8

V

Input hysteresis

0.25

V

Input voltage range

V

-5

Input current

10

µA

-10

High output voltage

V

Low output voltage

0.025

V

High output resistance

0.42

Ω

Low output resistance

0.22

Ω

Peak output current

15

A

Continuous output current

Limited by package power dissipation

2.5

A

Rise time

4

5

ns

ns

Fall time

4

5.5

ns

ns

ON propagation delay

25

ns

OFF propagation delay

22

ns

Minimum pulse width

8

ns

Power supply voltage

Recommended

8

15

18

V

Power supply current

0.4

3.8

0.4

1

5

1

mA

mA

mA

Parameter

Value

30V

All Other Pins

Power Dissipation

2W

100W Note: 1

Storage Temperature

-40°C to 150°C

Soldering Lead Temperature

(10 seconds maximum)

300°C

Note: Operating the device outside of the “Absolute Maximum Rat-

ings” may cause permanent damage. Typical values indicate conditions

for which the device is intended to be functional but do not guarantee

specific performance limits. The guaranteed specifications apply only for

the test conditions listed. Exposure to absolute maximum conditions for

extended periods may impact device reliability.

Note: 1- Limited by high frequency performance, not package dissipa-

tion.

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD procedures when handling and

assembling.

All specifications are subject to change at any time without notice.

Parameter

Value

Maximum Junction Temperature

150°C

Operating Temperature Range

-40°C to 85° C

0.25° C/W

Moisture Sensitivity Level (MSL)

1