15 A Dual Low-Side RF MOSFET Driver

IXRFD615X2

2

Absolute Maximum Ratings

Electrical Characteristics

All voltage measurements with respect to GND. IXRFD615X2 configured as described in Test Conditions for one driver.

Symbol

Parameter

Test Conditions

Typ

Max

Units

Min

High input voltage

3

V

3.5

Low input voltage

2.8

0.8

V

Input hysteresis

0.23

V

Input voltage range

V

-5

Input current

10

µA

-10

High output voltage

V

Low output voltage

0.025

V

High output resistance

0.5

Ω

Low output resistance

0.35

Ω

Peak output current

14

A

Continuous output current

1.3

A

Rise time

4

6

ns

ns

Fall time

4

5.5

ns

ns

ON propagation delay

24

ns

OFF propagation delay

22

ns

Minimum pulse width

8

ns

Power supply voltage

Recommended

8

15

18

V

Power supply current

0

1

0

1

3

5

mA

mA

mA

Parameter

Value

30 V

All Other Pins

Total Power Dissipation

2 W

100 W

Storage Temperature

-40° C to 150° C

Soldering Lead Temperature

(10 seconds maximum)

300° C

Note: Operating the device outside of the “ Absolute Maximum

Ratings” may cause permanent damage. Typical values indicate

conditions for which the device is intended to be functional but do

not guarantee specific performance limits. The guaranteed specifica-

tions apply only for the test conditions listed. Exposure to absolute

maximum conditions for extended periods may impact device relia-

bility.

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD procedures when handling and

assembling.

All specifications are subject to change at any time without notice.

Parameter

Value

Maximum Junction Temperature

150° C

Operating Temperature Range

-40° C to 85° C