1

30 A Low-Side RF MOSFET Driver

IXRFD631

Features

Applications

Description

The IXRFD631 is a CMOS high-

speed, high-current gate driver

specifically designed to drive

MOSFETs in Class D and E HF

RF applications as well as other

applications requiring ultrafast rise

and fall times or short minimum

pulse widths. The IXRFD631 is an

improved version of the IXRFD630 with a Kelvin ground

connection on the input side to allow use of a common

mode choke to avoid problems with ground bounce. It can

source and sink 30 A of peak current while producing volt-

age rise and fall times of less than 4 ns and minimum pulse

widths of 8 ns. The input of the driver is compatible with +5

V or CMOS and is fully immune to latch up over the entire

operating range. Designed with small internal delays, cross

conduction or current shoot-through is virtually eliminated.

The features and wide safety margin in operating voltage

and power make the IXRFD631 unmatched in performance

and value.

The surface mount IXRFD631 is packaged in a low-

inductance RF package incorporating advanced layout

techniques to minimize stray lead inductances for optimum

switching performance.

IN

OUT

0

0

1

1

Fig. 1- Block Diagram and Truth Table