IXRFD631 datasheet(2/7 Pages) IXYS

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IXZ631DF18N50

RF Power MOSFET & Driver

Device Specifications

Device Performance

Symbol

Test Condition

Minimum

Typical

Maximum

RDS(ON)

VCC = 15 V, ID = 0.5IDM25 A

Pulse t ≤ 300 µs,

Duty Cycle ≤ 2%

0.3 Ω

VCC

8 V

15 V

20 V

IN (Signal Input)

- 5 V

VCC + 0.3 V

VIH (High Input Voltage)

VCC = 15 V

3.5 V

3 V

VIL (Low Input Voltage)

2.8 V

0.8 V

VHYS (Input hysteresis)

0.23 V

ZIN

f = 1 MHz

930-j7960 Ω

Cstray

f = 1 MHz any one pin to the

back plane metal

46 pF

COSS

VIN (VGS) = 0 V, VDS = 0.8 VDSS(max)

f =1 MHz

172 pF

tONDLY

25 ns

TC = 25 °C

VCC = 15 V 1 µs pulse,

ID= 9 A

tOFFDLY

28 ns

3.4 ns

1.65 ns

Symbol

Test Conditions

Maximum Ratings

fMAX

ID = 0.5 IDM25 A

27 MHz

VDSS

500 V

VCC

20 V

VDS = 0.8 VDSS

TJ = 25°C

50 uA

IDSS

VGS = 0 V

TJ = 125°C

1 mA

IDM25

= 25°C

18 A

IDM

TC = 25°C, pulse limited by TJM

95 A

IAR

TC = 25°C

18 A

PT (MOSFET and Driver)

= 25°C

625 W

RthJC

0.2 °C/W

RthJHS

0.4 °C/W

Parameter

Value

Maximum junction temperature

150 °C

Operating temperature range

- 40 °C to 85 °C

Weight

5.5 g

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