MCP111/112

DS21889B-page 2

 2004 Microchip Technology Inc.

1.0

ELECTRICAL

CHARACTERISTICS

Absolute Maximum Ratings†

Output current (RST) . . . . . . . . . . . . . . . . . . . . . . . . . .10 mA

Storage temperature . . . . . . . . . . . . . . . . . . –65°C to + 150°C

Ambient temp. with power applied . . . . . . . –40°C to + 125°C

Maximum Junction temp. with power applied . . . . . . . . 150°C

ESD protection on all pins

. . . . . . . . . . . . . . . . . . . . . . . . . ≥ 2kV

† Notice: Stresses above those listed under “Maximum Rat-

ings” may cause permanent damage to the device. This is a

stress rating only and functional operation of the device at

those or any other conditions above those indicated in the

operational listings of this specification is not implied. Expo-

sure to maximum rating conditions for extended periods may

affect device reliability.

DC CHARACTERISTICS

Parameters

Sym

Min

Typ

Max

Units

Conditions

Operating Voltage Range

1.0

—

5.5

V

1.0

—

V

Operating Current

—< 1

1.75

µA

MCP1XX-195

1.872

1.900

1.929

V

1.853

1.900

1.948

V

MCP1XX-240

2.285

2.320

2.355

V

2.262

2.320

2.378

V

Note 2

MCP1XX-270

2.591

2.630

2.670

V

2.564

2.630

2.696

V

Note 2

MCP1XX-290

2.857

2.900

2.944

V

2.828

2.900

2.973

V

Note 2

MCP1XX-300

2.886

2.930

2.974

V

2.857

2.930

3.003

V

Note 2

MCP1XX-315

3.034

3.080

3.126

V

3.003

3.080

3.157

V

Note 2

MCP1XX-450

4.314

4.380

4.446

V

4.271

4.380

4.490

V

Note 2

MCP1XX-475

4.561

4.630

4.700

V

4.514

4.630

4.746

V

Note 2

—

±100

—

ppm/

°C

Threshold Hysteresis

(min. = 1%, max = 6%)

MCP1XX-195

0.019

—

0.114

V

MCP1XX-240

0.023

—

0.139

V

MCP1XX-270

0.026

—

0.158

V

MCP1XX-290

0.029

—

0.174

V

MCP1XX-300

0.029

—

0.176

V

MCP1XX-315

0.031

—

0.185

V

MCP1XX-450

0.044

—

0.263

V

MCP1XX-475

0.046

—

0.278

V

Note

1:

Trip point is ±1.5% from typical value.

2:

Trip point is ±2.5% from typical value.