2N6348 datasheet(1/2 Pages) ISC

部件名	2N6348

功能描述	isc Thyristors

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制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc website：www.iscsemi.com

isc & iscsemi is registered trademark

isc Thyristors

2N6348

DESCRIPTION

·

With TO-220 packaging

·

High operating junction temperature

·

Very high commutation performancemaximized at each

gate sensitivity

·

Minimum Lot-to-Lot variations for robust device performance

and reliable operation

APPLICATIONS

·

High temperature, high power motor control

·

Solid state relays;heating and cooking appliances

·

Switching applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

MIN

UNIT

VDRM

Repetitive peak off-state voltage

600

V

VRRM

Repetitive peak reverse voltage

600

V

IT(RMS)

RMS on-state current

@Tc=80℃

8

A

ITSM

Surge non-repetitive on-state current

60HZ

100

A

PG(AV)

Average gate power dissipation ( over any 20 ms period )

0.5

W

Tj

Operating junction temperature

-40~125

℃

Tstg

Storage temperature

-40~150

℃

ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified)

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

IRRM

Repetitive peak reverse current

VR=VRRM Rated;

VD=VDRM Rated;

Tj=25℃

Tj=125℃

0.01

2

mA

IDRM

Repetitive peak off-state current

VTM

On-state voltage

IT=11A,tP=380μs

1.55

V

IGT

Gate-trigger current

VD =12V;RL=100Ω

Ⅰ

50

mA

Ⅱ

75

Ⅲ

50

Ⅳ

75

VGT

Gate-trigger voltage

VD =12V;RL=100Ω

2.5

V

类似零件编号 - 2N6348

制造商	部件名	数据表	功能描述
Motorola, Inc	2N6348	114Kb / 6P	TRIACS Silicon Bidirectional Triode Thyristors
New Jersey Semi-Conduct...	2N6348	167Kb / 1P	TO-220AB
Digitron Semiconductors	2N6348	249Kb / 4P	SILICON BIDIRECTIONAL TRIODE THYRISTORS
List of Unclassifed Man...	2N6348	95Kb / 1P	TRIAC IN PLASTIC PACKAGE
ON Semiconductor	2N6348A	61Kb / 8P	Silicon Bidirectional Thyristors February, 2000 ??Rev. 1

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