BU508A datasheet(2/2 Pages) ISC

部件名	BU508A

功能描述	isc Silicon NPN Power Transistor

PDF	2 Pages

Scroll/Zoom	100%

制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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isc Product Specification

isc website：www.iscsemi.com

isc & iscsemi is registered trademark

isc Silicon NPN Power Transistor

BU508A

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

VCEO(SUS)

Collector-Emitter Sustaining Voltage

IC= 30mA ; IB= 0

700

VCE(sat)

Collector-Emitter Saturation Voltage

IC= 4.5A; IB= 2.0A

1.0

VBE(sat)

Base-Emitter Saturation Voltage

IC= 4.5A; IB= 2.0A

1.3

ICES

Collector Cutoff Current

VCE= 1500V ; VBE= 0

VCE=1500V;VBE=0;TC=125℃

1.0

2.0

IEBO

Emitter Cutoff Current

VEB= 5.0V ; IC= 0

0.1

hFE

DC Current Gain

IC= 0.1A ; VCE= 5V

COB

Output Capacitance

IE=0;VCB= 10V; ftest= 0.1MHz

125

Current-Gain—Bandwidth Product

IC=0.1A;VCE=5V;ftest=1.0MHz

MHz

Pulsed: Pulse duration ≤300 us, duty cycle ≤1.5 %

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