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BUP51 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BUP51 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon NPN Power Transistors BUP51 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 175 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 250 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 10 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 20A; IB= 2A 0.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 40A; IB= 4A 0.6 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 20A; IB= 2A 1.1 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= 40A; IB= 4A 1.2 V ICEO Collector Cutoff Current VCE= 175V; IB=0 0.1 mA ICBO Collector Cutoff Current VCB= 250V; IE=0 0.1 mA hFE-1 DC Current Gain IC= 20A; VCE= 4V 20 hFE-2 DC Current Gain IC= 40A; VCE= 4V 20 hFE-3 DC Current Gain IC= 70A; VCE= 4V 10 |
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