CSD20060D datasheet(1/6 Pages) CREE

部件名	CSD20060D

功能描述	Silicon Carbide Schottky Diode

PDF	6 Pages

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制造商	CREE [Cree, Inc]

网页	http://www.cree.com/

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www.cree.com/power

CSD20060D–Silicon Carbide Schottky Diode

Zero recovery® RectifieR

Features

• 600-VoltSchottkyRectifier

• ZeroReverseRecoveryCurrent

• ZeroForwardRecoveryVoltage

• High-FrequencyOperation

• Temperature-IndependentSwitchingBehavior

• ExtremelyFastSwitching

• PositiveTemperatureCoefficientonV

F

Benefits

• ReplaceBipolarwithUnipolarRectifiers

• EssentiallyNoSwitchingLosses

• HigherEfficiency

• ReductionofHeatSinkRequirements

• ParallelDevicesWithoutThermalRunaway

Applications

• SwitchModePowerSupplies

• PowerFactorCorrection

-TypicalPFCP

out:2000W-4000W

• MotorDrives

-TypicalPower:5HP-10HP

Package

TO-247-3

Maximum Ratings

Symbol

Parameter

Value

Unit

Test Conditions

Note

V

RRM

RepetitivePeakReverseVoltage

600

V

RSM

SurgePeakReverseVoltage

600

V

DC

DCBlockingVoltage

600

V

I

F(AVG)

AverageForwardCurrent(PerLeg/Device)

10/20

16.5/33

A

T

C=150˚C

T

C=125˚C

I

F(Peak)

PeakForwardCurrent

25/50

A

T

C=125˚,TREP<1mS,Duty=0.5

I

FRM

RepetitivePeakForwardSurgeCurrent

(PerLeg/Device)

43/86

29/58

A

T

C=25˚C,tP=10ms,HalfSineWave

T

C=125˚C,tP=10ms,HalfSineWave

I

FSM

Non-RepetitivePeakForwardSurgeCurrent

(PerLeg)

77

A

T

C=25˚C,tP=1.5ms,HalfSineWave

I

FSM

Non-RepetitivePeakForwardSurgeCurrent

(PerLeg/Device)

250/500

A

T

C=25˚C,tP=10µs,Pulse

P

tot

PowerDissipation(PerLeg)

138

46

W

T

C=25˚C

T

C=125˚C

T

J,Tstg

OperatingJunctionandStorageTemperature

-55to

+175

˚C

TO-247MountingTorque

1

8.8

Nm

lbf-in

M3Screw

6-32Screw

Part Number

Package

Marking

CSD20060D

TO-247-3

CSD20060

V

RRM

= 600 V

I

F(AVG)=20A

Q

c

=56nC

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