2SC752TM datasheet(1/5 Pages) TOSHIBA

部件名	2SC752TM

功能描述	Ultra High Speed Switching Applications Computer, Counter Applications

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制造商	TOSHIBA [Toshiba Semiconductor]

网页	http://www.semicon.toshiba.co.jp/eng

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2SC752(G)TM

2003-03-25

1

TOSHIBA Transistor

Silicon NPN Epitaxial Type (PCT process)

2SC752(G)TM

Ultra High Speed Switching Applications

Computer, Counter Applications

· High transition frequency: fT = 400 MHz (typ.)

· Low saturation voltage: VCE (sat) = 0.3 V (max)

· High speed switching time: tstg = 15 ns (typ.)

Maximum Ratings (Ta

==== 25°C)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

VCBO

40

V

Collector-emitter voltage

VCEO

15

V

Emitter-base voltage

VEBO

5

V

Collector current

IC

200

mA

Base current

IB

40

mA

Collector power dissipation

PC

400

mW

Junction temperature

Tj

125

°C

Storage temperature range

Tstg

-55~125

°C

Electrical Characteristics (Ta

==== 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Collector cut-off current

ICBO

VCB = 40 V, IE = 0

¾

0.1

mA

Emitter cut-off current

IEBO

VEB = 5 V, IC = 0

¾

0.1

mA

hFE (1)

(Note)

VCE = 1 V, IC = 10 mA

40

¾

240

DC current gain

hFE (2)

VCE = 1 V, IC = 100 mA

20

¾

Collector-emitter saturation voltage

VCE (sat)

IC = 20 mA, IB = 1 mA

¾

0.3

V

Base-emitter saturation voltage

VBE (sat)

IC = 20 mA, IB = 1 mA

¾

1.0

V

Transition frequency

fT

VCE = 10 V, IC = 10 mA

200

400

¾

MHz

Collector output capacitance

Cob

VCB = 10 V, IE = 0, f = 1 MHz

¾

4

6

pF

Turn-on time

ton

¾

70

100

Storage time

tstg

¾

15

30

Switching time

Fall time

tf

Duty cycle <

= 2％

¾

30

70

ns

Note: hFE classification R: 40~80, O: 70~140, Y: 120~240

Unit: mm

JEDEC

TO-92

JEITA

SC-43

TOSHIBA

2-5F1B

Weight: 0.21 g (typ.)

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