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2SC5376F 数据表(PDF) 2 Page - Toshiba Semiconductor

部件名 2SC5376F
功能描述  Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications
PDF  5 Pages
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制造商  TOSHIBA [Toshiba Semiconductor]
网页  http://www.semicon.toshiba.co.jp/eng
标志 TOSHIBA - Toshiba Semiconductor

2SC5376F 数据表(HTML) 2 Page - Toshiba Semiconductor

  2SC5376F Datasheet HTML 1Page - Toshiba Semiconductor 2SC5376F Datasheet HTML 2Page - Toshiba Semiconductor 2SC5376F Datasheet HTML 3Page - Toshiba Semiconductor 2SC5376F Datasheet HTML 4Page - Toshiba Semiconductor 2SC5376F Datasheet HTML 5Page - Toshiba Semiconductor  
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2SC5376F
2002-01-16
2
Electrical Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 15 V, IE = 0
¾
¾
0.1
mA
Emitter cut-off current
IEBO
VEB = 5 V, IC = 0
¾
¾
0.1
mA
DC current gain
hFE
(Note)
VCE = 2 V, IC = 10 mA
300
¾
1000
VCE (sat) (1) IC = 10 mA, IB = 0.5 mA
¾
15
30
mV
Collector-emitter saturation voltage
VCE (sat) (2) IC = 200 mA, IB = 10 mA
¾
110
250
mV
Base-emitter voltage
VBE (sat)
IC = 200 mA, IB = 10 mA
¾
0.87
1.2
V
Transition frequency
fT
VCE = 2 V, IC = 10 mA
80
130
¾
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
¾
4.2
¾
pF
Collector-emitter on resistance
Ron
IB = 1 mA, Vin = 1 Vrms, f = 1 kHz
¾
0.9
¾
W
Turn-on time
ton
¾
85
¾
ns
Storage time
tstg
¾
170
¾
ns
Switching time
Falll time
tf
¾
40
¾
ns
Note: hFE Classification
A: 300 to 600, B: 500 to 1000
OUTPUT
300
W
VCC = 6 V
VBB = -3 V
INPUT
0 V
10
ms
Duty Cycle <= 2%
IB1
= -IB2 = 5 mA



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