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数据搜索系统，热门电子元器件搜索 |
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M58WR032FT 数据表(PDF) 37 Page - STMicroelectronics |
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M58WR032FT 数据表(HTML) 37 Page - STMicroelectronics |
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37 / 86 page  37/86 M58WR032FT, M58WR032FB Note: 1. TA= –40 to 85°C; VDD = 1.7V to 2V; VDDQ = 1.7V to 2.24V. 2. The difference between Preprogrammed and not preprogrammed is not significant (‹30ms). 3. Values are liable to change with the external system-level overhead (command sequence and Status Register polling execution). 4. Measurements performed at 25°C. TA = 25°C ±5°C for Quadruple Word, Double Word and Quadruple Enhanced Factory Program. Erase Parameter Block (4 KWord) 0.25 2.5 s Main Block (32 KWord) 0.8 4 s Bank (4Mbit) 3.5 s Program(3) Word/ Double Word/ Quadruple Word(4) 8100 µs Parameter Block (4 KWord) Quad-Enhanced Factory 10 ms Enhanced Factory 25 ms Quadruple Word(4) 8ms Word 32 ms Main Block (32 KWord) Quad-Enhanced Factory 80 ms Enhanced Factory 200 ms Quadruple Word(4) 64 ms Word 256 ms Bank (4Mbit) Quad-Enhanced Factory(4) 520 ms Quadruple Word(4) 510 ms Program/Erase Cycles (per Block) Main Blocks 1000 cycles Parameter Blocks 2500 cycles Parameter Condition Min Typ Typical after 100k W/E Cycles Max Unit |
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