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BAV20WS-G 数据表(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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BAV20WS-G 数据表(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 4 page ![]() - Fast Switching Speed - Surface Mount Package Ideally Suited For Automatic Insertion - High Conductance - Packing code with suffix "G" means green compound (halogen-free) - Halogen-free according to IEC 61249-2-21 Surface mount fast switching diode General purpose small signal switching MECHANICAL DATA - Case: SOD-323 small outline plastic package - Moisture sensitivity level 1 - Polarity: Indicated by cathode band - Weight: 4.36 ± 0.5 mg SYMBOL UNIT IO mA VRRM V VR V IFRM mA PD mW RθJA °C/W TJ , TSTG °C SYMBOL UNIT CJ pF trr ns Document Number: DS_S0000021 Version: A15 BAV19WS-G/BAV20WS-G/BAV21WS-G APPLICATION - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC SOD-323 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) PARAMETER BAV19WS-G BAV20WS-G BAV21WS-G Taiwan Semiconductor Small Signal Product 200mA, 120V - 250V Switching Diodes FEATURES V VF V V(BR)R PARAMETER IFSM A Junction and Storage Temperature Range Non-Repetitive Peak Forward Surge Current Pulse Width = 1 s nA Note 1: Test condition : IR= 100μA BAV21WS-G BAV20WS-G BAV19WS-G IR -5 -50 Note 2: Test condition : BAV19WS-G @ VR=100V, BAV20WS-G @ VR=150V, BAV21WS-G @ VR=200V Note 3: Test condition : IF= IR= 30mA , RL=100Ω , Irr=0.1xIR Breakdown Voltage (Note 1) Reverse Recovery Time (Note 3) Junction Capacitance Reverse Leakage Current (Note 2) Forward Voltage VR=0, f=1.0MHz IF=100mA BAV21WS-G BAV20WS-G Pulse Width = 1 μs Average Rectified Output Current -65 to 150 0.5 2.5 200 120 625 200 250 MIN MAX 120 200 - 250 BAV19WS-G IF=200mA - - 100 - -1.00 -1.25 Power Dissipation 200 Thermal Resistance Junction to Ambient 625 Repetitive Peak Reverse Voltage 100 150 200 DC Reverse Voltage Repetitive Peak Forward Surge Current |
类似零件编号 - BAV20WS-G |
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类似说明 - BAV20WS-G |
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