ESDLW - ESJLW

Taiwan Semiconductor

2

Version:B1809

THERMAL PERFORMANCE

PARAMETER

SYMBOL

TYP.

UNIT

Junction-to-lead thermal resistance per diode

34

°C/W

Junction-to-ambient thermal resistance per diode

88

°C/W

Junction-to-case thermal resistance per diode

35

°C/W

Thermal Performance Note: Units mounted on recommended PCB (5mm x 5mm Cu pad test board)

PARAMETER

CONDITIONS

SYMBOL

TYP.

MAX.

UNIT

Forward voltage per diode

(1)

ESDLW

0.80

-

V

0.85

0.95

V

0.65

-

V

0.72

0.80

V

ESGLW

0.88

-

V

0.96

1.30

V

0.69

-

V

0.77

1.05

V

ESJLW

1.03

-

V

1.14

1.70

V

0.82

-

V

0.94

1.30

V

(2)

-

1

µA

-

150

µA

Junction capacitance

ESDLW

21

-

pF

ESGLW

20

-

pF

ESJLW

19

-

pF

Reverse recovery time

-

35

ns

Notes:

1. Pulse test with PW=0.3 ms

2. Pulse test with PW=30 ms

ORDERING INFORMATION

ORDERING CODE

(Note 1, 2)

PACKAGE

PACKING

ESxLWHRVG

SOD-123W

3,000 / 7" Plastic Reel

ESxLWHRQG

SOD-123W

10,000 / 13" Paper Reel

ESxLW RVG

SOD-123W

3,000 / 7" Plastic Reel

ESxLW RQG

SOD-123W

10,000 / 13" Paper Reel

Notes:

1. "x" defines voltage from 200V (ESDLW) to 600V (ESJLW)

2. "H" means AEC-Q101 qualified