2)

If Military/Aerospace specified devices are required,

please contact the National Semiconductor Sales Office/

Distributors for availability and specifications.

V

−0.3V to +6.0V

EN_CELL, EN_PCS,

GAIN_MODE, INV_A1,

INV_A2, PA_ON, INV_Y1,

CELL_ON, CELL_GAIN,

PCS_ON, PCS_GAIN, INV_Y2

and A1_SINK

−0.3V to (V

GND to GND SLUG

Junction Temperature

150˚C

Maximum Power Dissipation

(Note 3)

2.0W

Storage Temperature

−65˚C to +150˚C

ESD (Note 4):

Human Body Model

2 kV

Machine Model

200V

V

1.8V to 5.5V

Junction Temperature

−40˚C to +125˚C

Operating Temperature

−40˚C to +85˚C

Thermal Resistance

θ

39.8˚C/W

Maximum Power Dissipation

(Note 5)

1.38W

DC Electrical Characteristics

Unless otherwise noted, V

pearing in boldface type apply over the entire junction temperature range for operation, −40˚C to +85˚C. (Note 6)

Symbol

Parameter

Conditions

Typ

Limit

Units

Min

Max

I

IN

Input Current

All Input Pins

0.05

5

µA

I

Q

Quiescent Current

All inputs tied to V

No load at the outputs.

0.002

5

µA

I

LEAKAGE

Output Leakage Current

CELL_ON, PCS_ON

CELL_GAIN, PCS_GAIN

10

µA

A1_SINK

5

R

DS-ON

MOSFET’s ON Resistance

P-Ch, V

CELL_ON, PCS_ON

CELL_GAIN, PCS_GAIN

275

500

m

Ω

P-Ch, V

CELL_ON, PCS_ON

CELL_GAIN, PCS_GAIN

430

650

V

IH

Logic High Input

1.8V

≤ V

EN_CELL, EN_PCS, INV_A1,

GAIN_MODE, INV_A2

1.4

V

2.5V

≤ V

DD

≤ 3.5V

EN_CELL, EN_PCS, INV_A1,

GAIN_MODE, INV_A2

2.0

V

IL

Logic Low Input

1.8V

≤ V

DD

≤ 3.5V

EN_CELL, EN_PCS, INV_A1,

GAIN_MODE, INV_A2

0.4

V

V

OH

Logic High Output

PA_ON, INV_Y1,

I

2.93

2.8

V

INV_Y2,

I

2.74

2.5

V

OL

Logic Low Output

PA_ON, INV_Y1, I

80

200

mV

INV_Y2, A1_SINK

I

16

55

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