数据搜索系统,热门电子元器件搜索
  Chinese  ▼
ALLDATASHEETCN.COM

X  

STP2NK90Z 数据表(PDF) 3 Page - STMicroelectronics

部件名 STP2NK90Z
功能描述  N-CHANNEL 900V-5W-2.1A TO-220/DPAK/IPAK Zener-Protected SuperMESHTM MOSFET
PDF  13 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STP2NK90Z 数据表(HTML) 3 Page - STMicroelectronics

  STP2NK90Z Datasheet HTML 1Page - STMicroelectronics STP2NK90Z Datasheet HTML 2Page - STMicroelectronics STP2NK90Z Datasheet HTML 3Page - STMicroelectronics STP2NK90Z Datasheet HTML 4Page - STMicroelectronics STP2NK90Z Datasheet HTML 5Page - STMicroelectronics STP2NK90Z Datasheet HTML 6Page - STMicroelectronics STP2NK90Z Datasheet HTML 7Page - STMicroelectronics STP2NK90Z Datasheet HTML 8Page - STMicroelectronics STP2NK90Z Datasheet HTML 9Page - STMicroelectronics Next Button
Zoom Inzoom in Zoom Outzoom out
 3 / 13 page
background image
3/13
STP2NK90Z - STD2NK90Z - STD2NK90Z-1
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 7: On /Off
Table 8: Dynamic
Table 9: Source Drain Diode
(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(2) Pulse width limited by safe operating area.
(3) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source Breakdown
Voltage
ID = 1 mA, VGS = 0
900
V
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125°C
1
50
µA
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20 V
± 10
µA
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 50 µA
3
3.75
4.5
V
RDS(on
Static Drain-source On
Resistance
VGS = 10 V, ID = 1.05 A
5
6.5
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs (1)
Forward Transconductance VDS = 15 V , ID = 1.05 A
2.3
S
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25 V, f = 1 MHz, VGS = 0
485
50
10
pF
pF
pF
COSS eq (3).
Equivalent Output
Capacitance
VGS = 0 V, VDS = 0 to 720 V
24
pF
td(on)
tr
td(off)
tf
Turn-on Delay Time
Rise Time
Turn-off-Delay Time
Fall Time
VDD = 450 V, ID = 1 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 19)
21
11
43
40
ns
ns
ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 720 V, ID = 2 A,
VGS = 10 V
(see Figure 22)
19.5
3.4
10.8
27
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
ISDM (2)
Source-drain Current
Source-drain Current (pulsed)
2.1
8.4
A
A
VSD (1)
Forward On Voltage
ISD = 2.1 A, VGS = 0
1.6
V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 2 A, di/dt = 100 A/µs
VDD = 50V
(see Figure 20)
415
1.5
7.2
ns
µC
A
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 2 A, di/dt = 100 A/µs
VDD = 50V, Tj = 150°C
(see Figure 20)
515
1.9
7.5
ns
µC
A



Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13


数据表 下载

Go To PDF Page


链接网址



ALLDATASHEET是否为您带来帮助?  [ DONATE ] 

关于 Alldatasheet   |   广告服务   |   联系我们   |   隐私政策   |   数据表链接    |   链接交换   |   制造商名单
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com