STPS20H100CF datasheet(3/8 Pages) STMICROELECTRONICS

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STPS20H100CT/CF/CG/CR/CFP

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1E-3

1E-2

1E-1

1E+0

100

120

140

160

180

200

t(s)

IM(A)

Tc=50°C

Tc=75°C

Tc=125°C

δ=0.5

Fig. 5: Non repetitive surge peak forward current

versus overload duration (maximum values, per

diode) (TO-220AB, D

2PAK, I2PAK)

1E-3

1E-2

1E-1

1E+0

100

120

140

IM(A)

δ=0.5

t(s)

Tj=125°C

Tj=75°C

Tj=50°C

Fig. 6: Non repetitive surge peak forward current

versus overload duration (maximum values, per

diode) (ISOWATT220AB, TO-220FPAB).

0.2

0.4

0.6

0.8

1.2

100

125

150

T (°C)

P(t )

(25°C)

ARM p

ARM

Fig. 4: Normalized avalanche power derating

versus junction temperature.

0.001

0.01

0.1

0.01

0.1

100

1000

t (µs)

P(t )

(1µs)

ARM p

ARM

Fig. 3: Normalized avalanche power derating

versus pulse duration.

IF(av) (A)

PF(av)(W)

δ = 0.5

δ = 1

δ = 0.05

δ = 0.2

δ = 0.1

δ=tp/T

Fig. 1: Average forward power dissipation versus

average forward current (per diode).

δ=tp/T

100

125

150

175

IF(av)(A)

Tamb(°C)

ISOWATT220AB

TO-220FPAB

TO220AB

Rth(j-a)=Rth(j-c)

Rth(j-a)=15°C/W

Rth(j-a)=40°C/W

Fig. 2: Average forward current versus ambient

temperature (

δ=0.5, per diode).

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