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TMP6131DECR 数据表(PDF) 8 Page - Texas Instruments

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部件名 TMP6131DECR
功能描述  Silicon-Based Linear Thermistor for Temperature Sensing
PDF  29 Pages
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制造商  TI1 [Texas Instruments]
网页  http://www.ti.com
标志 TI1 - Texas Instruments

TMP6131DECR 数据表(HTML) 8 Page - Texas Instruments

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VTemp = VBias X RTMP61
RBias + RTMP61
VTemp = IBias X RTMP61
VBias
RBias
RTMP61
+
VTEMP
-
IBias
+
VTEMP
-
RTMP61
8
TMP61
SBOS921 – DECEMBER 2018
www.ti.com
Product Folder Links: TMP61
Submit Documentation Feedback
Copyright © 2018, Texas Instruments Incorporated
8 Detailed Description
8.1 Overview
The TMP61xx series of Silicon Linear Thermistors has a linear positive temperature coefficient (PTC) that results
in a uniform and consistent temperature coefficient of resistance (TCR) across a wide operating temperature
range. They are suitable for use for temperature measurement, protection, compensation, and control systems.
Compared to traditional NTC thermistors, the TMP61xx series of devices offers enhanced linearity and consistent
sensitivity across the full temperature range. They also have robust performance due to their immunity to
environmental variation and their built-in fail-safe behavior at high temperatures. These devices are currently
available in 2-pin, DEC surface-mount, 0402 footprint compatible packages and 2-pin LPG through-hole, mini-
sized transistor-outline TO-92S packages.
8.2 Functional Block Diagram
Figure 10. Typical Implementation Circuits
8.3 Feature Description
As shown in Figure 1 and Figure 2, the TMP61xx has a good linear behaviour across the whole temperature
range, but a small non-linearity can observed as well as supply dependence as shown in Figure 3 and Figure 4.
The TMP61xx is fabricated using a special silicon process where the device key characteristics—the temperature
coefficient of resistance (TCR) and nominal resistance (R25)—are controlled using the doping level and active
region area. Also, the TMP61xx has an active area and a substrate due to the polarized terminals of the device.
The positive terminal should be connected to the highest potential while the negative terminal (which is tied to
the substrate internally) should be connected to the lowest potential. Equation 1 and Equation 2 can help the
user approximate the device resistance and TCR. Table 1 and Table 2 show the typical resistances, resistance
spread, and maximum expected error across temperature using a direct Ideal bias current or an ideal voltage
bias in a divider circuit.
R (Ω)
≈ 8504.85 + 55.08 T + 0.17 T
2
where
T is the temperature of interest
(1)
TCR (ppm/°C) = (RT2 – RT1) / ((T2 – T1) × R(T2+T1)/2)
(2)
Below are the definitions of the key terms used throughout this document:
ISns: Current flowing through TMP61
VSns: Voltage across the two terminals of TMP61
IBias: Current supplied by the biasing circuit
VBias: Voltage supplied by the biasing circuit
VTemp: Output voltage corresponding to the measured temperature. Note that this is different than VSns in case
of a voltage divider circuit with TMP61 in the high side and VTemp is taken across RBias.



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