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TMP6131DECR 数据表(PDF) 8 Page - Texas Instruments |
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TMP6131DECR 数据表(HTML) 8 Page - Texas Instruments |
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8 / 29 page ![]() VTemp = VBias X RTMP61 RBias + RTMP61 VTemp = IBias X RTMP61 VBias RBias RTMP61 + VTEMP - IBias + VTEMP - RTMP61 8 TMP61 SBOS921 – DECEMBER 2018 www.ti.com Product Folder Links: TMP61 Submit Documentation Feedback Copyright © 2018, Texas Instruments Incorporated 8 Detailed Description 8.1 Overview The TMP61xx series of Silicon Linear Thermistors has a linear positive temperature coefficient (PTC) that results in a uniform and consistent temperature coefficient of resistance (TCR) across a wide operating temperature range. They are suitable for use for temperature measurement, protection, compensation, and control systems. Compared to traditional NTC thermistors, the TMP61xx series of devices offers enhanced linearity and consistent sensitivity across the full temperature range. They also have robust performance due to their immunity to environmental variation and their built-in fail-safe behavior at high temperatures. These devices are currently available in 2-pin, DEC surface-mount, 0402 footprint compatible packages and 2-pin LPG through-hole, mini- sized transistor-outline TO-92S packages. 8.2 Functional Block Diagram Figure 10. Typical Implementation Circuits 8.3 Feature Description As shown in Figure 1 and Figure 2, the TMP61xx has a good linear behaviour across the whole temperature range, but a small non-linearity can observed as well as supply dependence as shown in Figure 3 and Figure 4. The TMP61xx is fabricated using a special silicon process where the device key characteristics—the temperature coefficient of resistance (TCR) and nominal resistance (R25)—are controlled using the doping level and active region area. Also, the TMP61xx has an active area and a substrate due to the polarized terminals of the device. The positive terminal should be connected to the highest potential while the negative terminal (which is tied to the substrate internally) should be connected to the lowest potential. Equation 1 and Equation 2 can help the user approximate the device resistance and TCR. Table 1 and Table 2 show the typical resistances, resistance spread, and maximum expected error across temperature using a direct Ideal bias current or an ideal voltage bias in a divider circuit. R (Ω) ≈ 8504.85 + 55.08 T + 0.17 T 2 where • T is the temperature of interest (1) TCR (ppm/°C) = (RT2 – RT1) / ((T2 – T1) × R(T2+T1)/2) (2) Below are the definitions of the key terms used throughout this document: • ISns: Current flowing through TMP61 • VSns: Voltage across the two terminals of TMP61 • IBias: Current supplied by the biasing circuit • VBias: Voltage supplied by the biasing circuit • VTemp: Output voltage corresponding to the measured temperature. Note that this is different than VSns in case of a voltage divider circuit with TMP61 in the high side and VTemp is taken across RBias. |
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