AP6503 datasheet(4/16 Pages) DIODES

4 / 16 page

AP6503

Document number: DS35077 Rev. 7 - 2

4 of 16

www.diodes.com

May 2017

AP6503

Electrical Characteristics (VIN = 12V, TA = +25°C, unless otherwise specified.)

Symbol

Parameter

Test Condition

Min

Typ

Max

Unit

IIN

Shutdown Supply Current

VEN = 0V

0.3

3.0

µA

IIN

Supply Current (Quiescent)

VEN = 2.0V, VFB = 1.0V

0.6

1.5

RDS(ON)1

High-Side Switch On-Resistance (Note 8)

100

mΩ

RDS(ON)2

Low-Side Switch On-Resistance (Note 8)

100

mΩ

IHSLIMIT

Peak HS Current Limit

Vout=3.3V, Minimum duty cycle

5.5

ILSLIMIT

Valley LS Current Limit

Vout=3.3V, From Drain to

Source

0.9

Switch Leakage Current

VEN = 0V, VSW = 0V and 12V

μA

AVEA

Error Amplifier Voltage Gain

(Note 8)

800

V/V

GEA

Error Amplifier Transconductance

ΔIC = ±10µA

1,000

µA/V

GCS

COMP to Current Sense

Transconductance

2.8

A/V

FSW

Oscillator Frequency

VFB = 0.75V

300

340

380

kHz

FFB

Fold-back Frequency

VFB = 0V

100

kHz

DMAX

Maximum Duty Cycle

VFB = 800mV

TON

Minimum On Time

130

VFB

Feedback Voltage

TA = -40°C to +85°C

900

925

950

Feedback Overvoltage Threshold

1.1

VEN_RISING

EN Rising Threshold

0.7

0.8

0.9

EN Lockout Threshold Voltage

2.2

2.5

2.7

EN Lockout Hysteresis

220

INUVVTH

VIN Undervoltage Threshold Rising

3.80

4.05

4.40

INUVHYS

VIN Undervoltage Threshold Hysteresis

250

Soft-Start Current

VSS = 0V

μA

Soft-Start Period

CSS = 0.1µF

TSD

Thermal Shutdown (Note 8)

+160

°C

Note:

8. Guaranteed by design.

AP6503 数据表(PDF) 4 Page - Diodes Incorporated

AP6503 数据表(HTML) 4 Page - Diodes Incorporated

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16

数据表下载