AP65111A

Document number: DS39760 Rev. 1 - 2

3 of 13

www.diodes.com

June 2017

© Diodes Incorporated

AP65111A

Symbol

Parameter

Rating

Unit

Supply Voltage

-0.3 to 20

V

Switch Node Voltage

V

Bootstrap Voltage

V

Feedback Voltage

-0.3V to +6.0

V

Enable/UVLO Voltage

-0.3V to +6.0

V

Storage Temperature

-65 to +150

°C

Junction Temperature

+160

°C

Lead Temperature

+260

°C

ESD Susceptibility (Note 5)

HBM

Human Body Model

2

kV

CDM

Charged Device Model

1

kV

Notes:

4. Stresses greater than the 'Absolute Maximum Ratings' specified above may cause permanent damage to the device. These are stress ratings only;

functional operation of the device at these or any other conditions exceeding those indicated in this specification is not implied. Device reliability may

be affected by exposure to absolute maximum rating conditions for extended periods of time.

5. Semiconductor devices are ESD sensitive and may be damaged by exposure to ESD events. Suitable ESD precautions should be taken when

handling and transporting these devices.

Symbol

Parameter

Rating

Unit

Junction to Ambient

TSOT26

120

°C/W

Junction to Case

TSOT26

30

°C/W

Note:

6. Test condition for TSOT26: Device mounted on FR-4 substrate, single-layer PC board, 2oz copper, with minimum recommended pad layout.

Symbol

Parameter

Min

Max

Unit

Supply Voltage

4.5

18

V

Operating Ambient Temperature Range

-40

+85

°C

Note:

7. The device function is not guaranteed outside of the recommended operating conditions.