2N7002K datasheet(2/4 Pages) SECELECTRONICS

2 / 4 page

2N7002K

0.3A , 60V , RDS(ON) 4 

N-Ch Small Signal MOSFET with ESD Protection

Elektronische Bauelemente

30-Mar-2011 Rev. A

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Static

Drain-Source Breakdown Voltage

BVDSS

VGS =0, ID =10μA

Gate-Threshold Voltage

VGS(th)

2.5

VDS = VGS, ID =250μA

Drain-Source On-Resistance

rDS(ON)

Ω

VGS =4.5V, ID =200mA

VGS =10V, ID =500mA

Zero Gate Voltage Drain Current

IDSS

μA

VDS =60V, VGS =0

Gate-Body Leakage Current

IGSS

±10

μA

VDS = 0, VGS = ±20V

Forward Transconductance

gfs

100

VDS = 15V, ID =250 mA

Dynamic

Total Gate Charge

0.8

VDS=15V, VGS=5V, ID=200mA

Turn-On Time

t(on)

VDD=30V, RL=150Ω,

ID=200mA, VGEN=10V,

RG=10Ω　

Turn-Off Time

t(off)

Input Capacitance

Ciss

VDS=25V, VGS=0, f=1MHz

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Source-Drain Diode

Diode Forward Voltage

VSD

0.82

1.3

IS=200mA, VGS=0

Continuous Diode Forward Current

300

Pulse Diode Forward Current

ISM

2000

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