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2N7002T 数据表(PDF) 2 Page - SEC Electronics Inc.

部件名 2N7002T
功能描述  N-Channel Plastic- Encapsulate MOSFETS
PDF  3 Pages
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制造商  SECELECTRONICS [SEC Electronics Inc.]
网页  http://www.secsemi.com
标志 SECELECTRONICS - SEC Electronics Inc.

2N7002T 数据表(HTML) 2 Page - SEC Electronics Inc.

  2N7002T Datasheet HTML 1Page - SEC Electronics Inc. 2N7002T Datasheet HTML 2Page - SEC Electronics Inc. 2N7002T Datasheet HTML 3Page - SEC Electronics Inc.  
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2N7002T
115mA, 60V, RDS(ON) 5
N-Channel Plastic-Encapsulate MOSFETS
Elektronische Bauelemente
12-Jun-2018 Rev. D
Page 2 of 3
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
ELECTRICAL CHARACTERISTICS (T
A=25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Drain-Source Breakdown Voltage
V(BR)DSS
60
-
-
V
VGS=0, ID=250µA
Gate-Threshold Voltage
Vth(GS)
1
-
2.5
V
VDS=VGS, ID=250µA
Gate-Body Leakage
IGSS
-
-
±80
nA
VDS=0, VGS= ±20V
Zero Gate Voltage Drain Current
IDSS
-
-
80
nA
VDS=60V, VGS=0
On-State Drain Current
ID(ON)
500
-
-
mA
VGS=10V, VDS=7V
Drain-Source On Resistance
RDS(ON)
-
-
5
VGS=10V, ID=500mA
-
-
7
VGS=5V, ID=50mA
Forward Trans Conductance
gfs
80
-
-
mS
VDS=10V, ID=200mA
Drain-Source On-Voltage
VDS(ON)
-
-
3.75
V
VGS=10V, ID=500mA
-
-
0.375
VGS=5V, ID=50mA
Diode Forward Voltage
VSD
0.55
-
1.2
V
IS=115mA, VGS=0
Input Capacitance
Ciss
-
50
-
pF
VDS=25V
VGS=0
f=1MHz
Output Capacitance
Coss
-
25
-
Reverse Transfer Capacitance
Crss
-
5
-
Switching Time
Turn-on Time
Td(on)
-
20
-
nS
VDD=25V, RL=50
ID=500mA, VGEN=10V
RG=25
Turn-off Time
Td(off)
-
40
-



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