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2N7002T 数据表(PDF) 2 Page - SEC Electronics Inc. |
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2N7002T 数据表(HTML) 2 Page - SEC Electronics Inc. |
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2 / 3 page ![]() 2N7002T 115mA, 60V, RDS(ON) 5 N-Channel Plastic-Encapsulate MOSFETS Elektronische Bauelemente 12-Jun-2018 Rev. D Page 2 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (T A=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Drain-Source Breakdown Voltage V(BR)DSS 60 - - V VGS=0, ID=250µA Gate-Threshold Voltage Vth(GS) 1 - 2.5 V VDS=VGS, ID=250µA Gate-Body Leakage IGSS - - ±80 nA VDS=0, VGS= ±20V Zero Gate Voltage Drain Current IDSS - - 80 nA VDS=60V, VGS=0 On-State Drain Current ID(ON) 500 - - mA VGS=10V, VDS=7V Drain-Source On Resistance RDS(ON) - - 5 VGS=10V, ID=500mA - - 7 VGS=5V, ID=50mA Forward Trans Conductance gfs 80 - - mS VDS=10V, ID=200mA Drain-Source On-Voltage VDS(ON) - - 3.75 V VGS=10V, ID=500mA - - 0.375 VGS=5V, ID=50mA Diode Forward Voltage VSD 0.55 - 1.2 V IS=115mA, VGS=0 Input Capacitance Ciss - 50 - pF VDS=25V VGS=0 f=1MHz Output Capacitance Coss - 25 - Reverse Transfer Capacitance Crss - 5 - Switching Time Turn-on Time Td(on) - 20 - nS VDD=25V, RL=50 ID=500mA, VGEN=10V RG=25 Turn-off Time Td(off) - 40 - |
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