TSM048NB06LCR datasheet(1/6 Pages) TSC

部件名	TSM048NB06LCR

功能描述	N-Channel Power MOSFET 60V, 107A, 4.8m廓

PDF	6 Pages

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制造商	TSC [Taiwan Semiconductor Company, Ltd]

网页	http://www.taiwansemi.com

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TSM048NB06LCR

Taiwan Semiconductor

1

Version: B1804

N-Channel Power MOSFET

60V, 107A, 4.8m

Ω

FEATURES

● Low R

DS(ON) to minimize conductive losses

● Logic level

● Low gate charge for fast power switching

● 100% UIS and R

g tested.

● 175°C Operating Junction Temperature

● Compliant to RoHS directive 2011/65/EU and in

accordance to WEEE 2002/96/EC

● Halogen-free according to IEC 61249-2-21

APPLICATIONS

● BLDC Motor Control

● Battery Power Management

● DC-DC converter

● Secondary Synchronous Rectification

KEY PERFORMANCE PARAMETERS

PARAMETER

VALUE

UNIT

VDS

60

V

RDS(on) (max)

VGS = 10V

4.8

m

Ω

VGS = 4.5V

6.8

Qg

52

nC

PDFN56

Note: MSL 1 (Moisture Sensitivity Level) per J-STD-020

ABSOLUTE MAXIMUM RATINGS (T

A = 25°C unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

VDS

60

V

Gate-Source Voltage

VGS

±20

V

Continuous Drain Current

(Note 1)

TC = 25°C

ID

107

A

TA = 25°C

16

Pulsed Drain Current

IDM

428

A

Single Pulse Avalanche Current

(Note 2)

IAS

35

A

Single Pulse Avalanche Energy

(Note 2)

EAS

184

mJ

Total Power Dissipation

TC = 25°C

PD

136

W

TC = 125°C

45

Total Power Dissipation

TA = 25°C

PD

3.1

W

TA = 125°C

1

Operating Junction and Storage Temperature Range

TJ, TSTG

- 55 to +175

°C

THERMAL PERFORMANCE

PARAMETER

SYMBOL

LIMIT

UNIT

Junction to Case Thermal Resistance

RӨJC

1.1

°C/W

Junction to Ambient Thermal Resistance

RӨJA

48

°C/W

Thermal Performance Note: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case-

thermal reference is defined at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is

determined by the user’s board design. The RӨJA limit presented here is based on mounting on a 1 in

2 pad of 2 oz copper.

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