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IXYS reserves the right to change limits, test conditions and dimensions

Contents

Page

Symbols and Definitions

2

Nomenclature

2

General Information

3

Assembly Instructions

4

FRED, Rectifier Diode and Thyristor Chips in Planar Design

5

IGBT Chips

V

CES

I

C

G-Series, Low V

600 ...1200 V

7 ... 20 A

6

G-Series, Fast C2 Types

600 V

7 ... 20 A

6

S-Series, SCSOA Capability, Fast Types

600 V

10 ... 20 A

6

E-Series, Improved NPT³ technology

1200 ... 1700 V

20 ... 150 A

7

MOSFET Chips

V

DSS

R

DS(on)

70 ...1200 V

0.005 ... 4.5

Ω

8-10

DS(on)

55 ... 300 V

0.015 ... 0.135

Ω

11

P-Channel Power MOSFET

-100 ...-600 V

0.06 ... 1.2

Ω

12

N-Channel Depletion Mode MOSFET

500 ...1000 V

30 ... 110

Ω

12

Layouts

13-17

Bipolar Chips

V

I

Rectifier Diodes

1200 ... 1800 V

12 ... 416 A

18-19

FREDs

600 ... 1200 V

8 ... 244 A

20-21

Low Leakage FREDs

200 ... 1200 V

9 ... 148 A

22-23

SONIC-FRDTM Diodes

600 ... 1800 V

12 ... 150 A

24-25

GaAs Schottky Diodes

100 ... 600 V

3.5 ... 25 A

26-27

Schottky Diodes

8 ... 200 V

28 ... 145 A

28-31

Phase Control Thyristors

800 ... 2200 V

15 ... 540 A

32-33

Fast Rectifier Diodes

1600 ... 1800 V

10 ... 26 A

34

Direct Copper Bonded (DCB), Direct Alu Bonded (DAB) Ceramic Substrates

What is DCB/DAB?

35

DCB Specification

36

Chip-Shortform2004.pmd

26.10.2004, 12:44

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