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UMD9112G-S08-R 数据表(PDF) 4 Page - Unisonic Technologies |
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UMD9112G-S08-R 数据表(HTML) 4 Page - Unisonic Technologies |
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4 / 7 page ![]() UMD9112 Preliminary CMOS IC UNISONIC TECHNOLOGIES CO., LTD 4 of 7 www.unisonic.com.tw QW-R109-042.a ABSOLU T E M AX I M U M RAT I N G (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Maximum Logic and Control Supply Voltage VCC 6.5 V Maximum Output Supply Voltage VDD 6.5 V Maximum External Output Voltage VOUT VDD V Maximum External Input Voltage VIN VCC V Peak Output Current/Channel IOUT_PEAK 2.5 A Junction Temperature TJ +150 °C Operational Temperature Range TOPR -20 ~ +85 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Maximum power dissipation at different ambient can be obtained from the following formula PD=(TJ-TA)/ θJA. Where TJ is junction temperature with the circuit working, and TA is the ambient temperature with the circuit working. 3. Method of calculation of circuit power dissipation P=I 2×R Where P is circuit power dissipation, I is continuous output current, and R is circuit output on-resistance. Circuit power dissipation P must be smaller than maximum power dissipation PD. T H ERM AL DAT A PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 143 °C/W RECOM M EN DED OPERAT I ON AL CON DI T I ON S (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Maximum Logic and Control Supply Voltage VCC 5.0 V Maximum Output Supply Voltage VDD 6.0 V Note: Logic control power supply VCC and power supply VDD are fully separate internally, and can supply electricity separately. ELECT RI CAL CH ARACT ERI ST I CS (TA=25°C, VCC=3V, VDD =3V unless otherwise stated) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT VCC Standby Current ICCST 0 10 μA VDD Standby Current IVDDST INA=INB=L, VDD=VCC=6V 0 10 μA VCC Static Supply Current ICC INA=H, INB=L or INA=L, INB=H or INA=H, INB=H 0.3 1.0 mA VDD Static Supply Current IVDD INA=H, INB=L or INA=L, INB=H or INA=H, INB=H 0.1 1.5 mA Input High Level VINH 0.8×VCC V Input Low Level VINL 0.2×VCC V Output Resistance RON IO=±200mA 0.6 0.9 Ω Spark-Killing Diode Leakage Current IDLEAK 100 μA Spark-Killing Diode Voltage VD IOUT=400mA 0.9 V Protection Temperature TSD 150 °C TSD hysteresis TSDH 30 °C |
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