IXYS reserves the right to change limits, test conditions, and dimensions.

IXFN38N100Q2

IXYS MOSFETs and IGBTs are covered by one or more

of the following U.S. patents:

4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1

4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665

6,534,343

Fig. 11. Capacitance

100

1000

10000

0

5

10

15

20

25

30

35

40

V

Ciss

Coss

Crss

f = 1M Hz

Fig. 10. Gate Charge

0

2

4

6

8

10

0

40

80

120

160

200

240

Q

Fig. 7. Input Admittance

0

10

20

30

40

50

33.5

44.5

55.5

6

V

25

-40

Fig. 12. Maximum Transient Thermal

Resistance

0

0.02

0.04

0.06

0.08

0.1

0.12

0.14

0.16

1

10

100

1000

Pulse Width - milliseconds

Fig. 8. Transconductance

0

10

20

30

40

50

60

70

80

0

10

2030

40506070

I

25

125

Fig. 9. Source Current vs. Source-To-Drain

Voltage

0

10

20

30

40

50

60

70

80

90

0.2

0.4

0.6

0.8

1

1.2

V